Applications of semiconductor lasers in optical communications and other lightwave technologies have expanded considerably in recent years. This updated edition of the leading guide in the field responds to these developments. It incorporates the latest advances in the design and performance of semiconductor lasers for lightwave transmission systems, and helps engineers design high-quality optical transmitters. While the first edition, published in 1986, focused on long-wavelength semiconductor lasers (mostly InGaAsP lasers), Semiconductor Lasers, Second Edition has been broadened in scope to incorporate all kinds: Short-wavelength lasers, strained-layer quantum-well lasers, phase-shifted and gain-coupled distributed-feedback lasers, surface-emitting semiconductor lasers. Both visible-light and infrared lasers are discussed in detail, and a section on mode-locked semiconductor lasers has been added. Practical guidelines are included on operating characteristics, recombination mechanisms in semiconductors, epitaxical growth techniques, laser structures and their performance, and degradation and reliability. Useul rate equations are also provided to model the performance of semiconductor lasers. The authors, both of whom are well-known experts on semiconductor lasers, explain the theoretical and the practical aspects of semiconductor lasers. They include problems at the end of each chpater to expedite learning. Two hundred illustrations further clarify various aspects of laser design and performance. semiconductor Lasers, Second Edition will help design and applications engineers stay on the cutting edge of semiconductor-laser technology. It will also be a valuable textbook for graduate-level students.
Basic concepts: Introduction; Maxwell's equations; Threshold condition and longitudinal modes; Gain and stimulated emission; Waveguide modes; Emission characteristics
Recombination mechanisms in semiconductors: Introduction; Radiative recombination; Nonradiative recombination; Experimental results; Threshold current density; Temperature Dependence of threshold current
Epitaxy and material parameters of InGaAsP: Introduction; Liquid-phase epitaxy; Vapor-phase epitaxy; etal-organic vapor-phase epitaxy; Molecular-beam epitaxy; Lattice-mismatch effects; Material parameters; Strained-layer epitaxy
Infrared and visible semiconductor lasers: Lead-salt lasers; Materials and physical properties; Band structure; optical gain; Auger recombination; Laser diode fabrication; Laser properties; Tuning characteristics; Other material systems
Degradation and reliability: Introduction; Defect formation in the active region; Catastrophic degradation; Degradation of current-confining junctions; Reliability assurance; DFB laser reliability
616 pages
Dimensions: 6 x 9
INCHES
Status: Available