Current Research: Silicon Photonics


Integrated Photonics


Integrated photonics has attracted much attention because of its potential for providing a monolithically integrated optoelectronic platform. Recent estalishment of the AIM Photonics Institute in Rochester is ikely to acclerate progress in this area. Silicon photonics has been a topoic of interest for more than a decade and willl continue to do so in near future.


Silicon-based 50-Gb/s optical transceiver (Source: Intel)

Our group was among the first to study nonlinear phenomena in silicon waveguides. We showedd in 2006 that ultrabroadband parametric generation and wavelength conversion can be realized in an SOI waveguide by tailoring its zero-dispersion wavelength and by launching the pump beam close to this wavelength. The use of dual-pump configuration permitted multiband operation with high efficiency over a broad spectral region extending over 300 nm.

Silicon waveguides can support solitons in the wavelength region near 1550 nm, if they are designed suitably to provide anomalous dispersion. In fact, we shows in 2007 that such waveguides can be used to create a supercontinuum extending over 350~nm or more by launching femtosecond pulses and propagating them as higher-order solitons. In contrast with optical fibers, stimulated Raman scattering played a relatively minor role.

In 2010, we were able to demonstrate an ultrafast Kerr shutter using silicon naowires, fabricated using the NSF-funded nanofabrication facility at Cornell University. We employed the nonlinear polarization rotation induced by a pump pulse on a probe beam and showed that this phenomenon can be used to realize a fast Kerr shutter in spite of the free-carrier and walk-off effects.

You can consult our list of recent publications by clicking on "Publications" on the left panel of this page.

© Copyright 2016 G. P. Agrawal. All rights reserved. (Last Updated 2/7/2017)