Professor Gary W. Wicks

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Recent Publications

 

“Use of nBn structures to suppress surface leakage currents in unpassivated InAs infrared photodetectors," J.R. Pedrazzani, S. Maimon, and G. W. Wicks, Electronics Letters 44, 1487 (2008).

“Molecular Beam Epitaxy Growth of Midinfrared "W" Light Emitting Diodes on InAs,” V.V. Kuznetsov and G.W. Wicks, Journal of Vacuum Science & Technology B 24, 1548 (2006).

“nBn Detector, an Infrared Detector with Reduced Dark Current and Higher Operating Temperature,” S. Maimon and G.W. Wicks, Applied Physics Letters 89, 151109 (2006).

“Studies of Ammonia Dissociation During the Gas Source Molecular Beam Epitaxial Growth of III-Nitrides,” G.W. Wicks, M. W. Koch, and J.R. Pedrazzani, Journal of Vacuum Science & Technology B 23, 1186 (2005).

“Enhanced linear and nonlinear optical phase response of AlGaAs microring resonators,” J. E. Heebner, N. N. Lepeshkin, A. Schweinsberg, G. W. Wicks, R. W. Boyd, R. Grover, and P.-T. Ho, Optics Letters 29, (2004).

"Physical Processes of Current Gain in InAs Bipolar Junction Transistors," X. Wu, K.L. Averett, S. Maimon, M.W. Koch and G.W. Wicks, Physica E20, 511 (2004).

“Colliding-pulse passive harmonic mode-locking in a femtosecond Yb-doped fiber laser with a semiconductor saturable absorber,” Y. Deng, M. W. Koch, F. Lu, G. W. Wicks, and W. H. Knox, Opt. Express 12, 3872 (2004).

“Low-voltage InAsP/InAs HBT and metamorphic InAs BJT devices grown by molecular beam epitaxy,” K.L. Averett, X. Wu, M.W. Koch, G.W. Wicks, Journal of Crystal Growth 251, 852 (2003).

“Nanofabrication of optical structures and devices for photonics and biophotonics,” R.W. Boyd, J.E. Heebner, N.N. Lepeshkin, Q.-H. Park,, A. Schweinsberg, G.W. Wicks, A.S. Baca, J.E. Fajardo, R.R. Hancock, M.A. Lewis, R.M. Boysel, M. Quesada, R. Welty, A.R. Bleier, J. Treichler, R.E. Slusher, J. Modern Optics 50, 2543 (2003).

“Emitter injection efficiency and base transport factor in InAs bipolar transistors,” X. Wu, S. Maimon, K. L. Averett, M. W. Koch, G. W. Wicks, J. Applied Physics 94, 5423 (2003).

“InAs-based Heterojunction Bipolar Transistors,” S. Maimon, K.L. Averett, X. Wu, M.W. Koch, G.W. Wicks, Elec. Lett. 38, 344 (2002).

“InAs-Based Bipolar Transistors Grown by Molecular Beam Epitaxy,” K.L. Averett, S. Maimon, X. Wu, M.W. Koch, G.W. Wicks, J. Vacuum Science and Technology B 20, 1213 (2002).

“Electron and hole dynamics in GaN,” Hong Ye, G.W. Wicks, P.M. Fauchet, Materials Science & Engineering B 82, 131 (2001).

“A study of cracking in GaN grown on silicon by molecular beam epitaxy,” R. Jothilingam, M.W. Koch, J.B. Posthill, and G.W. Wicks, J. Electronic Materials 30, 821 (2001).

“A mode-locked fiber laser with a chirped grating mirror,” J.W. Haus, M. Hayduk, W. Kaechele, G. Shaulov, J. Theimer, K. Teegarden, G. Wicks, Optics Communications 14, 205 (2000).

“Selective Area Growth of GaN Using Gas Source Molecular Beam Epitaxy,” V. K. Gupta, K. L. Averett, M. W. Koch, Brian L. McIntyre, and G. W. Wicks, J.Electronic Materials 29, 322 (2000).

“Molecular beam epitaxial growth of BGaAs ternary compounds,” V. K. Gupta, M. W. Koch, N. J. Watkins, Yongli Gao and G. W. Wicks, J.Electronic Materials 29, 1387 (2000).

“A mode-locked fiber laser with a chirped grating mirror,” J. W. Haus, M. Hayduk, W. Kaechele, G. Shaulov, J. Theimer, K. Teegarden, G. Wicks, Optics Communications 174, 205 (2000).

“Hot Hole Relaxation Dynamics in p-GaN,” Hong Ye, G.W. Wicks and P.M.Fauchet, Appl.Phys.Lett 77, 1185 (2000).

"Native oxides and regrowth on III-N surfaces," V.K. Gupta, C.C. Wamsley, M.W. Koch, and G.W. Wicks, J. Vac. Sci. and Technol. B 17, 1249 (1999).

"Molecular beam epitaxy growth of boron-containing nitrides," V.K. Gupta, C.C. Wamsley, M.W. Koch, and G.W. Wicks, J. Vac. Sci. and Technol. B 17, 1246 (1999).

"Hot electron relaxation time in GaN," Hong Ye, G.W. Wicks, P.M. Fauchet, Appl.Phys.Lett. 74, 711 (1998).

"High-order azimuthal spatial modes of concentric-circle-grating surface-emitting semiconductor lasers," Olson C., Greene P L., Wicks G W., Hall D G., Rishton S., Appl. Phys. Lett. 72, 1284 (1998).

"Low threshold 1.3 um InAsP/GaInAsP lasers grown by solid source molecular beam epitaxy," C. C. Wamsley, M. W. Koch and G. W. Wicks, J. Crystal Growth 175/176, 42 (1997).

"Lasing Behavior of Circular Grating Surface Emitting Semiconductor Lasers," Rebecca H. Jordan, Dennis G. Hall, Oliver King, Gary Wicks, and Stephen Rishton, J. Opt. Soc. of Am. B, 449 (1997).

"Hot Carrier Thermalization In Low-Temperature-Grown III-V Semiconductors," A. I. Lobad, Y. Kostoulas, G. W. Wicks and P. M. Fauchet, in Hot Carriers in Semiconductors, edited by K. Hess, J.-P. Leburton and U. Ravaioli (Plenum, New York, 1996), pp 97-99.

"Solid source molecular beam epitaxy of low threshold strained layer 1.3 um InAsP/GaInAsP lasers," C. C. Wamsley, M. W. Koch and G. W. Wicks, Elec. Lett. 32, 1674 (1996).

"Solid Source Molecular Beam Epitaxy of GaInAsP/InP: Growth Mechanisms and Machine Operation," C. C. Wamsley, M. W. Koch, and G. W. Wicks, J. Vac. Sci. Technol B 14, 2322 (1996).

"Analysis of cracking efficiency of an atomic hydrogen source, and its effect on desorption of Al(x)Ga(1-x)As native oxides," G. W. Wicks, E. R. Rueckwald and M. W. Koch, J. Vac. Sci. Technol B 14 , 2184 (1996).

"Femtosecond carrier dynamics in low-temperature grown Ga0.51In0.49P," Y. Kostoulas, K.B. Ucer, G. W. Wicks, and P.M. Fauchet, Appl. Phys. Lett. 67, 3756 (1995).

"Beryllium diffusion in GaAs/AlGaAs single quantum well separate confinement heterostructure laser cores," G. E. Kohnke, M. W. Koch, C. E. C. Wood and G. W. Wicks, Appl. Phys. Lett. 66, 2786 (1995).

"Hole Relaxation in p-type InGaAs/AlGaAs Quantum Wells Observed by Ultrafast Mid-infrared Spectroscopy," Z. Xu, P. M. Fauchet, C. W. Rella, B. A. Richman, H. A. Schwettman, and G. W. Wicks, Phys. Rev. B 51, 10631 (1995) .

"Second Harmonic Generation Near 4 Ám in p-type Asymmetric GaAs/AlGaAs/AlAs Quantum Wells," Z. Xu, P. M. Fauchet, C. W. Rella, B. A. Richman, H. A. Schwettman, and G. W. Wicks, Solid State Comm. 93, 903 (1995).

"Femtosecond Carrier Dynamics in Low-Temperature Grown Indium Phosphide," Y. Kostoulas, L. Waxer, I. Walmsley, G. W. Wicks and P. M. Fauchet, Appl.Phys.Lett. 66, 1821 (1995).

"Phosphorus-vacancy-related deep levels in GaInP layers," Z.C.Huang, C.R.Wie, J.A.Varriano, M.W.Koch, and G.W.Wicks, J.Appl.Phys. 77, 1587 (1995).

"The Ultrafast Carrier Dynamics in Semiconductors: the Role of Defects," P.M. Fauchet, G. W. Wicks, Y. Kostoulas, A.I. Lobad and K.B. Ucer, Mat. Res. Soc. Symp. Proc. 378, 171 (1995).

"Second quantized state lasing and gain spectra measurements in n-type modulation doped GaAs/AlGaAs quantum well lasers," G. E. Kohnke and G. W. Wicks, IEEE J. Quant. Electronics 31, 1941 (1995)

 

 

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