Professor Gary W. Wicks

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Research Programs

Professor Wicks' research interests center around III-V semiconductors - epitaxial growth, optical properties and optical devices. Examples of his research include development of new techniques in the molecular beam epitaxial growth; reduced dimensional structures such as quantum wells, quantum dots and superlattices; studies of III-V heterostructure interfaces with Raman and photoluminescence spectroscopies; and quantum well lasers and optical detectors.

Research programs fall into two areas, semiconductor materials and semiconductor devices. In the materials area, examples of research include new developments in the growth of semiconductor crystals by molecular beam epitaxy such as solid phosphorus sources phosphides and new high temperature boron sources for boron-containing semiconductors, selective area growth of nitrides, and crack-free growth of nitrides on silicon. In the device area the research concentrates on arsenide and phosphide lasers in the near IR and visible; arsenide and antimonide materials for mid-IR lasers, LEDs, and photodetectors; and bipolar transistors in InAs- and GaSb-based materials.

Prof. Wicks' laboratory features two molecular beam epitaxy systems, one for arsenides / phosphides / nitrides and one for antimonides / arsenides. In addition, the lab has sample fabrication equipment, extensive optical materials characterization (photoluminescence, Raman spectroscopy, FTIR spectroscopy), electrical characterization (Hall measurements, CV measurements), x-ray diffraction, and electrical and optical device characterization.

GaInP/AInP Quantum Well Laser Diode

Grown by MBE with solid phosphorus source developed at the University of Rochester

 

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